DRY ETCHING METHOD OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide the etching method of a gallium nitride compound semiconductor, which suppresses an etching rate and etching dispersion by previously introducing O2 gas to etching gas, improves the controllability and the workability of a dry etching rate and can obtain the satisfactory reproducibility of an electric characteristic. SOLUTION: In a method for etching a gallium nitride compound semiconductor by using a plasma etching device, etching gas including CF4 and SiCl4 is introduced to the plasma etching device and the controllability of the etching rate is improved.