MOS TRANSISTOR, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable the operation of a DTMOS as a transistor even if a relatively large voltage is applied to a gate electrode of the DTMOS. SOLUTION: An nDTMOS 50 comprises an nMOS 56 arranged in a first active region 52 composed of p- regions and an nJFET 58 arranged in a second active region 54 composed of n- regions. Furthermore, the nDTMOS 50 is provided with a contact part 62 composed of p+ regions in the first active region 52. The contact part 62 is connected to a gate 64 and a drain 68 of the nJFET 58 through a wiring 78b. A source 66 of the nJFET 58 is connected electrically to a gate electrode 12 of the nMOS 56 through the wiring 78a.