| 摘要 |
PROBLEM TO BE SOLVED: To improve operation speed of a semiconductor integrated circuit, to reduce power consumption is operation as well as in standby, and to reduce the chip area. SOLUTION: The board electric potential (VBP and VBN) of an MIS transistor is made common between a first logic gate (1) whose power source for operation is a paired first electric potential (VDDL and VSSL) with relatively small difference in the electric potential, and a second logic gate (2) whose power source for operation is a paired second electric potential (VDDH and VSSH) with relatively large difference in electric potential. The drive capacity of the second logic gate is relatively high while the first logic gate requires relatively low current for operation. Related to the MIS transistor, a threshold voltage becomes higher by a reverse board bias while becoming lower by a forward board bias. Due to the common board electric potential, MOS transistors of both logic gates may be formed in a common well region even if different board bias states are established at both logic gates.
|
