发明名称 Chemical vapor deposition chamber
摘要 A semiconductor wafer-processing chamber comprises a substrate support platform having a centrally disposed recess and a substrate support assembly disposed over the centrally disposed recess of the support platform. At least one platform arm extends radially from the substrate support platform to a sidewall of said processing chamber. A pair of fluid line conduits, a RF cable conduit, a temperature probe conduit, and a backside gas supply line conduit having a pair of fluid lines, a RF cable, a temperature probe cable, and a backside gas supply line respectively, are disposed diagonally to define a negative slope through the at least one platform arm and communicate with the centrally disposed recess. The centrally disposed recess serves as a sump for drainage of unwanted fluids and contaminants through such conduits.
申请公布号 US2001045262(A1) 申请公布日期 2001.11.29
申请号 US20010797211 申请日期 2001.02.28
申请人 APPLIED MATERIALS, INC. 发明人 GUJER RUDOLF;CHO THOMAS K.;ISHIKAWA TETSUYA
分类号 C23C16/44;C23C16/458;(IPC1-7):C23C16/00;C23F1/02 主分类号 C23C16/44
代理机构 代理人
主权项
地址