METHOD FOR MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10 -9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber introduced into the chamber in a vacuum state controlled to higher than 10 -9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate by sputtering a prescribed target by using the mixture of the gases (a) and (b).