发明名称 STRUCTURE AND METHOD FOR FABRICATION OF AN IMPROVED CAPACITOR
摘要 <p>Structure and method for fabrication (figure 2) of an improved capacitor are disclosed. In one embodiment, the disclosed capacitor includes a metal column (60) comprising a number of interconnect metal segments (5) and a number of via metal segments (72) stacked on one another. The metal column constitutes one electrode (24) of the capacitor (50). Another electrode of the capacitor is a metal wall (56) surrounding the metal column. In one embodiment, the metal wall is fabricated from a number of interconnect metal structures (70) and a number of via metal structures stacked on one another. In one embodiment, the metal wall is shaped as a hexagon. In this embodiment, tight packing arrangement is achieved by packing individual hexagonal capacitors 'wall to wall' so as to achieve a cluster of individual hexagonal capacitors. The cluster of individual capacitors acts as a single composite capacitor. In one embodiment, the interconnect metal and via metal are both made of copper. In another embodiment, the interconnect metal is made of copper while the via metal is made of tungsten.</p>
申请公布号 WO2001091144(A1) 申请公布日期 2001.11.29
申请号 US2001017233 申请日期 2001.05.24
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