METHOD AND SYSTEM FOR SELECTIVE LINEWIDTH OPTIMIZATION DURING A LITHOGRAPHIC PROCESS

摘要

Particular types of distortion within a lithographic system may be characterized by linewidth control parameters. Linewidth control parameters of any given line or feature within a printed pattern vary as a result of optical capabilities of the lithography apparatus used, particular characteristics of the reticle, focus setting, light dose fluctuations, etc. The instant invention uses focus offset coefficients to change the focus at points within a slot to compensate for the linewidth control parameter variations introduced by the factors contributing to such variations. Additionally, different focuses can be set dynamically along the scan for a particular slot point. A set, or sets, of focus offset coefficients is generated for a particular lithography apparatus, depending on the number of line width control parameters for which correction is desired.