Flash memory structure using sidewall floating gate having one side thereof surrounded by control gate

摘要

A flash memory and a method of forming a flash memory, includes forming a polysilicon wordline on a substrate, the wordline having first and second sidewalls, the first sidewall being tapered, with respect to a surface of the substrate, to have a slope angle and the second sidewall having a slope angle greater than the slope angle of the first sidewall. Thereafter, a polysilicon spacer is formed on the second sidewall such that the spacer includes only one side which abuts the second sidewall of the polysilicon wordline.