| 摘要 |
An integrated circuit (IC) including integral, high k dielectric de-coupling capacitor constructed using a damascene process and contained within a single conductive layer of the IC structure. The IC comprises a substrate, a dielectric layer disposed over the substrate, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first line disposed adjacent to a second line, and a high k dielectric material disposed between the first line and the second line. The capacitor is formed between the first line and the second line separated by the high k dielectric material. Coupling the first line to a signal and coupling the second line to a capacitor signal connects the capacitor.
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