| 发明名称 |
METHOD FOR PRODUCING PROTECTION FILMS |
| 摘要 |
electronic engineering. SUBSTANCE: method involves producing thin dielectric layer of tantalum oxide at 180-400 C by precipitating it from gas phase by applying reaction between tantalum pentachloride, oxygen and nitrogen oxide. EFFECT: enhanced effectiveness in producing tantalum oxide film under low temperature.
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| 申请公布号 |
RU2176421(C2) |
申请公布日期 |
2001.11.27 |
| 申请号 |
RU19990115735 |
申请日期 |
1999.07.15 |
| 申请人 |
DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERS |
发明人 |
SHAKHMAEVA A.R.;ISMAILOV T.A.;SARKAROV T.EH.;GADZHIEV KH.M. |
| 分类号 |
H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
| 代理机构 |
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