发明名称 |
Synchronous semiconductor memory device having improved operational frequency margin at data input/output |
摘要 |
A synchronous semiconductor memory device includes a latch for temporarily storing data to be output to the outside, and a latch temporarily storing data input from the outside. The latches operate based on an internal clock when exchanging data with internal memory block, and operate based on a clock in phase with an external clock when exchanging data with the outside.
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申请公布号 |
US6324118(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US19990266918 |
申请日期 |
1999.03.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OOISHI TSUKASA |
分类号 |
G11C11/413;G11C7/00;G11C7/10;G11C11/401;G11C11/407;G11C11/409;G11C29/00;G11C29/10;G11C29/12;G11C29/40;G11C29/48;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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