发明名称 Merged semiconductor device having DRAM and SRAM and data transferring method using the semiconductor device
摘要 A merged semiconductor device having a DRAM and an SRAM, and a data transmitting method using the same are provided. In this device, the DRAM acts as a main memory, and the SRAM acts as a cache memory. The reading operation of the DRAM, and the writing operation of the SRAM are simultaneously controlled by a DRAM read control signal. Also, the writing operation of the DRAM, and the reading operation of the SRAM are simultaneously controlled by a DRAM write control signal. In this device, DRAM write commands and DRAM read commands can be continuously given. Writing of the SRAM starts after reading of the DRAM is completed, and writing of the DRAM starts after reading of the SRAM is completed.
申请公布号 US6324116(B1) 申请公布日期 2001.11.27
申请号 US20000595747 申请日期 2000.06.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NOH MI-JUNG;LEE JEONG-SEOK
分类号 G11C11/407;G06F12/08;(IPC1-7):G11C8/00 主分类号 G11C11/407
代理机构 代理人
主权项
地址