发明名称 |
Container structure for floating gate memory device and method for forming same |
摘要 |
A floating gate memory device comprises a first conductive floating gate layer which is horizontally oriented and a second conductive floating gate layer which is predominantly vertically oriented. The second layer contacts the first layer to make electrical contact therewith and also defines a recess. A control gate is formed within the recess. Having the control gate formed in the floating gate layer recess increases the capacitive coupling between the floating and control gates thereby improving the electrical properties of the cell and allowing for a reduction in cell size while maintaining
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申请公布号 |
US6323514(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US19990348725 |
申请日期 |
1999.07.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KAO DAVID Y. |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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