发明名称 |
Epitaxial overgrowth method and devices |
摘要 |
Method of epitaxial overgrowth of A<III>B<V> semiconductor on non-planar A<III>B<V> substrate containing grooves, the sidewalls of which have an equivalent orientation to that of the substrate. This method is applied to the fabrication of an heterobipolar transistor and of a vertical field effect transistor (700) and with buried gates (704) having gate sidewall crystal orientation the same as the substrate surface and a low index substrate crystal orientation without tilt to a higher index direction. The gate (704) may have modulated doping along the channel (706), and the drain (708) may have a lighter doping level than the channel which may be accomplished by an epitaxial overgrowth of the gates (704) to form the channels (706). |
申请公布号 |
EP0627761(B1) |
申请公布日期 |
2001.11.21 |
申请号 |
EP19940106664 |
申请日期 |
1994.04.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PLUMTON, DONALD L.;KIM, TAE SEUNG;YUAN, HAN-TZONG |
分类号 |
C23C16/18;H01L21/20;H01L21/205;H01L21/331;H01L21/337;H01L29/12;H01L29/737;H01L29/772;H01L29/78;(IPC1-7):H01L21/20;H01L29/76;H01L29/73 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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