Vacuum processing apparatus

摘要

A vacuum processing apparatus is capable of exhausting residual gas. With the reaction chamber (14) formed in the vacuum vessel (10) is made smaller than the assistance chamber (16), the thin film is grown by introducing the raw material gas (25) into the reaction chamber after moving the substrate stage toward the reaction chamber and decreasing the conductance of evacuation of the reaction chamber. When exhausting the residual gas by vacuum pumping, the substrate stage is moved into the assistance chamber thereby increasing the conductance of evacuation of the reaction chamber. Pressure in the reaction chamber is increased when growing the thin film and decreases when exhausting the residual gas by vacuum pumping. <IMAGE>