发明名称 |
METHOD FOR FABRICATING A MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES |
摘要 |
<p>A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers.Application to the realization of electronic circuits and membrane devices.</p> |
申请公布号 |
EP1155442(A1) |
申请公布日期 |
2001.11.21 |
申请号 |
EP20000903763 |
申请日期 |
2000.02.09 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
MORICEAU, HUBERT;RAYSSAC, OLIVIER;CARTIER, ANNE-MARIE;ASPAR, BERNARD |
分类号 |
F16J3/02;B81B3/00;B81C1/00;C23C14/06;C23C16/30;H01L21/02;H01L21/18;H01L21/762;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
F16J3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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