发明名称 METHOD FOR FABRICATING A MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES
摘要 <p>A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers.Application to the realization of electronic circuits and membrane devices.</p>
申请公布号 EP1155442(A1) 申请公布日期 2001.11.21
申请号 EP20000903763 申请日期 2000.02.09
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 MORICEAU, HUBERT;RAYSSAC, OLIVIER;CARTIER, ANNE-MARIE;ASPAR, BERNARD
分类号 F16J3/02;B81B3/00;B81C1/00;C23C14/06;C23C16/30;H01L21/02;H01L21/18;H01L21/762;H01L27/12;(IPC1-7):H01L21/20 主分类号 F16J3/02
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