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发明名称
METHOD OF FABRICATION OF DUAL GATE OXIDES FOR CMOS DEVICES
摘要
申请公布号
SG84562(A1)
申请公布日期
2001.11.20
申请号
SG20000000525
申请日期
2000.01.28
申请人
CHARTERED SEMICONDUCTOR MANUFACTURING LTD
发明人
QUEK SHYUE FONG;ANG TING CHEONG;ONG PUAY ING;LOONG SANG YEE
分类号
H01L21/8238;(IPC1-7):H01L21/823
主分类号
H01L21/8238
代理机构
代理人
主权项
地址
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