| 摘要 |
<p>933,934. Frequency modulation; pulse circuits. MARCONI'S WIRELESS TELEGRAPH CO. Ltd. Aug. 14, 1961 [Dec. 8, 1960], No. 42273/60. Classes 40 (5) and 40 (6). A frequency varying circuit comprises a resonant circuit including a voltage sensitive semi-conductive capacitor variable by a reverse bias voltage applied thereto; there being provided means deriving an exponentially varying voltage from the input signal which is applied wholly or in part as the reverse bias voltage of the sensitive capacitor; whereby linearity of frequency variation with input signal is shown to be increased. A direct voltage may be connected through a switch to charge a capacitance which is large compared with the variable capacitance, which thereafter discharges over a shunt resistance to develop an exponential voltage applied to a silicon junction diode having a depletion layer functioning as a voltage sensitive semi-conductive capacitor in series with the shunt resistance across a L.C. tuned circuit (Fig. 1, not shown). Alternatively a direct current may be switohably connected through an inductance which is then discharged to produce a bias voltage for the semi-conductive capacitance from the exponentially decaying currents. In Fig. 3 a silicon junction diode semi-conductive capacitor Cv is connected across parallel resonant circuit LCT in series with resistor R and has source Vb with a capacitance C (large compared with CT) and CV across RVb. A pulse source PS of amplitude Vg charges C through Rg and half-wave diode Dc and the peak charging voltage is stabilized by battery Vp in series with half-wave diode Dp across the capacitor. Diode De in opposite sense to Dp returned to a tap of the battery ensures that Cv does not become forward conducting, and the pulse charging and exponential discharging of the capacitor C varies the resonant frequency in linear sawtooth manner with time (Fig. 4). In Figs. 5, 6 (not shown), the bias voltages for diodes Dp, De are obtained from a potentiometer across battery Vp and the bias for semi-conductive capacitor from diode resistor capacitor circuits energized from the charging voltage or the pulsing voltage. In Fig. 7, a frequency modulating waveform from source AFS is connected over resistance Rs to charge capacitor C5 across Cv and resonant circuit LCT, in shunt with plural series diode resistor circuits Rd, D4 biased by sources Vd to progressively increasing values so that the diodes are rendered non-conductive in turn as the modulating voltage increases, and the charge voltage thus across C5 varies exponentially with the modulating voltage. In Fig. 8 (not shown), the capacitor C5 is charged through a valve circuit of exponential characteristics. In Fig. 9 the modulating signal is applied to the base of a PNP transistor T biased to operate at medium currents to give an exponential transfer characteristic and energized through resistor R 1 so as to charge the capacitance C5 to a voltage controlling the semi-conductive capacitor CV, and in Fig. 10 a diode DT in series with the transistor base has a similar temperature co-efficient to the transistor, thus compensating for temperature variations thereof. Since the exponential transfer characteristic of the transistor arises from the characteristics of its emitter base diode, the modulating signal is applicable (Fig. 11) over resistance RA to the base of transistor T1 whose emitter is coupled to transistor T2 energizing capacitor C5 with a feed-back path comprising resistance RB and separate diode D giving an exponential response without limitation to medium current operation of the transistors. The input signal may be applied direct to the collector of T1 whose base is coupled direct to the collector T2 and diode D (Fig. 12, not shown). Capacitor C5 may be replaced by a further semi-conductive diode capacitance (Fig. 13, not shown).</p> |
