| 发明名称 |
Semiconductor device and a process for forming a protective insulating layer thereof |
| 摘要 |
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
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| 申请公布号 |
US6319849(B1) |
申请公布日期 |
2001.11.20 |
| 申请号 |
US19990228272 |
申请日期 |
1999.01.11 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ODA KOUJI;OHKURA SEIJI |
| 分类号 |
H01L21/316;H01L21/8247;H01L23/00;H01L23/532;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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