发明名称 EQUIPMENT AND METHOD FOR ELECTROLYTIC PLATING
摘要 PROBLEM TO BE SOLVED: To solve problem that a plating liquid 3 soaks into the side of cathode 2 B quickly by a capillary phenomenon, pollutes the cathode 2 B and a semiconductor wafer W, and consequently that the cathode 2 B must be changed very frequently because when the semiconductor wafer W is released in order to be delivered to a carrying substrate P by means of raising a clamping mechanism, the semiconductor wafer W rises from the cathode 2 B and is placed on a sealing member 2D by an elasticity of the sealing member 2D. SOLUTION: An electrolytic plating equipment 10 pulls up a copper plated semiconductor wafer W from a plating liquid 11 in an electrolytic plating bath 12 through a solid support 18, adsorbs and holds the semiconductor wafer W by using a vacuum chuck 24 provided in the solid support 18, and then, lifts up the semiconductor wafer W at a stretch from a mounting part 18A of the solid support 18 through the vacuum chuck 24.
申请公布号 JP2001316880(A) 申请公布日期 2001.11.16
申请号 JP20000135245 申请日期 2000.05.08
申请人 TOKYO ELECTRON LTD 发明人 OKASE WATARU;YAGI YASUSHI;MATSUO TAKENOBU
分类号 C25D7/12;C25D17/00;C25D17/06;C25D17/08;H01L21/288;H05K3/18;(IPC1-7):C25D17/06 主分类号 C25D7/12
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