| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device in which image quality is prevented from deteriorating due to light reflected toward an individual electrode while reducing the chip size by not forming an individual electrode between light emitting diodes. SOLUTION: A plurality of one conductivity type semiconductor layers and opposite conductivity type semiconductor layers are provided on a substrate, the one conductivity type semiconductor layer is connected with common electrodes, the opposite conductivity type semiconductor layer is arranged with a plurality of light emitting diodes connected with individual electrodes, the light emitting diodes are divided into groups of a plurality of diodes, each group is connected with the same individual electrode, the opposite conductivity type semiconductor layers belonging to different groups are connected with the same common electrode, and the common electrodes belonging to different groups are interconnected through an insulation film. |
