| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device which can more precisely control the thickness of a film formed in a gas atmosphere mainly constituted of a coated material. SOLUTION: The temperature of a susceptor 4 where a substrate 1 is arranged is kept to a prescribed value by heat supplied from a heater block 5. Holes 6 are formed in the susceptor 4 and the heater block 5. The substrate 1 is lifted upward by a support bar 7 inserted into the holes 6 and 6'. The susceptor 4 is provided with a pattern 4b giving desired temperature inclination to the substrate 1 and a pattern storage 4a storing the pattern 4b.
|
