发明名称 COMPOSITION FOR FILM FORMATION AND MATERIAL FOR INSULATION FILM FORMATION
摘要 PROBLEM TO BE SOLVED: To provide a composition for film formation which gives a cured film excellent in heat resistance, electrical insulation properties (with a relative permittivity of 3 or lower), and resistances to cracks and CMP and is useful as a material for insulation film formation. SOLUTION: This composition for film formation is a mixture of (I) a polyorganosiloxane/polyimide hybrid obtained by subjecting (B) a silane compound to hydrolysis and condensation in the presence of (A) a polyamic acid and/or polyimide having a hydrolyzable organosilyl group and (II) a hydrolyzate and/or condensate of (B) the silane compound.
申请公布号 JP2001316620(A) 申请公布日期 2001.11.16
申请号 JP20000138311 申请日期 2000.05.11
申请人 JSR CORP 发明人 OKADA TAKASHI;MATSUBARA MINORU;GOTO KOHEI
分类号 C08L33/00;C08L67/00;C08L69/00;C08L71/00;C08L79/08;C08L83/02;C08L83/04;C09D179/04;C09D183/02;C09D183/04;C09D183/14;H01L21/312;(IPC1-7):C09D179/04 主分类号 C08L33/00
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