发明名称 |
COMPOSITION FOR FILM FORMATION AND MATERIAL FOR INSULATION FILM FORMATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for film formation which gives a cured film excellent in heat resistance, electrical insulation properties (with a relative permittivity of 3 or lower), and resistances to cracks and CMP and is useful as a material for insulation film formation. SOLUTION: This composition for film formation is a mixture of (I) a polyorganosiloxane/polyimide hybrid obtained by subjecting (B) a silane compound to hydrolysis and condensation in the presence of (A) a polyamic acid and/or polyimide having a hydrolyzable organosilyl group and (II) a hydrolyzate and/or condensate of (B) the silane compound.
|
申请公布号 |
JP2001316620(A) |
申请公布日期 |
2001.11.16 |
申请号 |
JP20000138311 |
申请日期 |
2000.05.11 |
申请人 |
JSR CORP |
发明人 |
OKADA TAKASHI;MATSUBARA MINORU;GOTO KOHEI |
分类号 |
C08L33/00;C08L67/00;C08L69/00;C08L71/00;C08L79/08;C08L83/02;C08L83/04;C09D179/04;C09D183/02;C09D183/04;C09D183/14;H01L21/312;(IPC1-7):C09D179/04 |
主分类号 |
C08L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|