| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser of multiquantum well structure which is of low threshold and excellent in high-speed characteristics while injection efficiency into an active layer is raised. SOLUTION: The semiconductor laser of multiquantum well structure is provided with a multiquantum well active layer 12 where InxGa1-xAs (0<x<=1) is a well layer, a first p-type clad layer 13 lattice-matching with InP formed on the active layer 12, and a second p-type clad layer 17 which is formed on the side surface of the active layer 12 and is higher in acceptor concentration than the p-type clad layer 13. Here, the acceptor concentration of the first p-type clad layer 13 is set to 2×1017 cm-3 or less within 0.25μm from the active layer 12, while that of the second p-type clad layer 17 set to 1×1018 cm-3 or above, and the well layer of active layer 12 comprises InxGa1-xAs (0.53<x<=1).
|
