发明名称 THIN FILM FORMING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a thin film forming process capable of forming a homo- generous thin film on a substrate by uniformly consuming a round target regardless of a distance (r) from its center to stabilize the direction of plume. SOLUTION: A process comprises the following three steps: a step to rotate a round target at a certain angular velocity (ω), a step in which the round target is irradiated by laser beam spot moving from the center to circumference of the target at a prescribed scanning rate and another step in which plume generated out of the target activated by laser beam is made to adhere to a substrate facing the target to form a coating over the substrate. When the laser beam spot is positioned in a distance (r) in a redial direction from the center of the round target, the scanning rate (V(r)) satisfies the formula, V(r)= V02-(rω)2}1/2 (wherein, V0 is a constant). By the above method, a homogeneous thin film can be formed on the substrate.
申请公布号 JP2001316802(A) 申请公布日期 2001.11.16
申请号 JP20000134567 申请日期 2000.05.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 WADA YUKIHIKO;TAKAMI TETSUYA
分类号 C23C14/28;(IPC1-7):C23C14/28 主分类号 C23C14/28
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