| 摘要 |
PROBLEM TO BE SOLVED: To relieve a defective leak current by suppressing over-head of a circuit. SOLUTION: Increase of the area of a memory cell array is suppressed by sharing memory cell power source lines 111-116 with an adjacent memory cell, a column including a defective memory cell and a column adjacent to this column are replaced by a redundant memory cell array 104, and power source separating means 121-126 corresponding to a memory cell power source line of the defective memory cell are made to be non-conductive.
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