发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A pre-stripping treatment solution for treatment of metal surfaces before stripping photoresist which has been used for patterning a metal layer. Also provided is a method of removing the photoresist, and a method of manufacturing semiconductor devices using the above solution and method. In one aspect of the invention, the photoresist is first ashed. The ashed resultant structure is then treated, prior to stripping of the photoresist, with a pre-stripping treatment solution of an organic acid solution having a carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100.
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申请公布号 |
US2001041455(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US19990270229 |
申请日期 |
1999.03.15 |
申请人 |
YUN CHEOL-JU;KWON YOUNG-MIN;PARK HEUNG-SOO |
发明人 |
YUN CHEOL-JU;KWON YOUNG-MIN;PARK HEUNG-SOO |
分类号 |
H01L21/306;G03F7/42;H01L21/02;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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