发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A pre-stripping treatment solution for treatment of metal surfaces before stripping photoresist which has been used for patterning a metal layer. Also provided is a method of removing the photoresist, and a method of manufacturing semiconductor devices using the above solution and method. In one aspect of the invention, the photoresist is first ashed. The ashed resultant structure is then treated, prior to stripping of the photoresist, with a pre-stripping treatment solution of an organic acid solution having a carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100.
申请公布号 US2001041455(A1) 申请公布日期 2001.11.15
申请号 US19990270229 申请日期 1999.03.15
申请人 YUN CHEOL-JU;KWON YOUNG-MIN;PARK HEUNG-SOO 发明人 YUN CHEOL-JU;KWON YOUNG-MIN;PARK HEUNG-SOO
分类号 H01L21/306;G03F7/42;H01L21/02;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 主分类号 H01L21/306
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