发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A first impurity diffusion layer forms one of source/drain regions and also forms a bit line. A first semiconductor layer, a channel semiconductor layer and a second semiconductor layer, which forms the other of source/drain regions and also forms a storage node, are disposed on the first impurity diffusion layer. A capacitor insulating film is disposed on a second conductive layer. A cell plate is disposed on a storage node with the capacitor insulating film therebetween. A capacitance of the bit line is reduced, and a dynamic random access memory thus constructed performs a high-speed operation.
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申请公布号 |
US2001041438(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010908607 |
申请日期 |
2001.07.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAEDA SHIGENOBU;INOUE YASUO;KURIYAMA HIROTADA;MAEGAWA SHIGETO;KANAMOTO KYOZO;IWAMATSU TOSHIAKI |
分类号 |
H01L27/10;H01L21/77;H01L21/8242;H01L21/84;H01L27/06;H01L27/108;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/476 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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