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发明名称
Bipolartransistor mit isolierter Gate mit einer planaren Gatestruktur und dessen Herstellungsverfahren
摘要
申请公布号
DE19750897(C2)
申请公布日期
2001.11.15
申请号
DE19971050897
申请日期
1997.11.17
申请人
MITSUBISHI DENKI K.K., TOKIO/TOKYO
发明人
NAKAMURA, HIDEKI;MINATO, TADAHARU
分类号
H01L29/78;H01L21/331;H01L29/739;(IPC1-7):H01L29/739
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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