| 摘要 |
<p>An apparatus, system, and method for uniformly and controllably heating the active surface of a semiconductor wafer during processing. The present invention includes a scanner assembly, which is operable to scan over a single semiconductor wafer. A radiation energy source is provided enclosed within the main body of the scanner assembly. The radiation energy source may be surrounded by a reflective/absorptive surface, which reflects and absorbs the emitted radiation, such that the resultant energy output is substantially free of non-uniformities. The reflected energy is directed through a slit in the scanner assembly to the wafer. The narrow wavelength band of energy allowed to escape the scanner assembly is uniformly scanned over the wafer to heat only the active layer of the wafer surface.</p> |
