| 摘要 |
An electric circuit for writing an analog voltage to a non-volatile memory capable of improving the accuracy of the write voltage as well as shortening the writing time of the analog voltage to the non-volatile memory cell. The circuit 100 including a write voltage generation circuit 110 capable of varying the write voltage in response to the control signals S0~S4, a multi-level sense amplifier 140 comparing the current mirror ratio current of the drain current of the memory cell with a reference comparison current Iref, a comparison circuit 160 comparing the output of the multi-level sense amplifier 140 with the output of the counter decoder 150, and an up-down shift register circuit 170 outputting the control signals based on the comparison result of the comparison circuit. The write period of time and the rise of a threshold voltage value are compared with each other. As the write voltage can be made to vary based on the result of this comparison, the write operation can be carried out under the write condition most suitable for a selected memory cell for write.
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