发明名称 |
Hetero-junction field effect transistor having an intermediate layer |
摘要 |
A hetero-junction FET has an intermediate layer including n-type-impurity doped layer between an electron supply layer and an n-type cap layer. The intermediate layer cancels the polarized negative charge generated between the electron supply layer and the n-type cap layer by ionized positive charge, thereby reducing the barrier against the electrons and source/drain resistance.
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申请公布号 |
US2001040247(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010818587 |
申请日期 |
2001.03.28 |
申请人 |
ANDO YUJI;MIYAMOTO HIRONOBU;IWATA NAOTAKA;MATSUNAGA KOJI;KUZUHARA MASAAKI;KASAHARA KENSUKE;KUNIHIRO KAZUAKI;TAKAHASHI YUJI;NAKAYAMA TATSUO;HAYAMA NOBUYUKI;OHNO YASUO |
发明人 |
ANDO YUJI;MIYAMOTO HIRONOBU;IWATA NAOTAKA;MATSUNAGA KOJI;KUZUHARA MASAAKI;KASAHARA KENSUKE;KUNIHIRO KAZUAKI;TAKAHASHI YUJI;NAKAYAMA TATSUO;HAYAMA NOBUYUKI;OHNO YASUO |
分类号 |
H01L29/812;H01L21/338;H01L29/20;H01L29/778;(IPC1-7):H01L31/072;H01L31/109 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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