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发明名称
INTEGRATED SEMICONDUCTOR MEMORY COMPRISING FERROELECTRIC MEMORY EFFECT MEMORY CELL
摘要
申请公布号
KR20010100781(A)
申请公布日期
2001.11.14
申请号
KR1020010005832
申请日期
2001.02.07
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
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