发明名称 Methods for improving chemical vapor deposition processing
摘要 A multi-step process is used to condition a chemical vapor deposition chamber after cleaning and between successive depositions by removing fluorine residues from the chamber with a hydrogen plasma, and subsequently depositing a solid compound in the chamber to encapsulate any particulates remaining in the chamber. <IMAGE>
申请公布号 EP1154037(A1) 申请公布日期 2001.11.14
申请号 EP20010304238 申请日期 2001.05.11
申请人 APPLIED MATERIALS, INC. 发明人 ROBERTSON, ROBERT;KOLLRACK, MIKE;LEE, ANGELA;TAKEHARA, TAKAKO;FENG, JEFF;SHANG, QUANYUAN;LAW, KAM
分类号 C23C16/44;H01L21/205 主分类号 C23C16/44
代理机构 代理人
主权项
地址