Methods for improving chemical vapor deposition processing
摘要
A multi-step process is used to condition a chemical vapor deposition chamber after cleaning and between successive depositions by removing fluorine residues from the chamber with a hydrogen plasma, and subsequently depositing a solid compound in the chamber to encapsulate any particulates remaining in the chamber. <IMAGE>
申请公布号
EP1154037(A1)
申请公布日期
2001.11.14
申请号
EP20010304238
申请日期
2001.05.11
申请人
APPLIED MATERIALS, INC.
发明人
ROBERTSON, ROBERT;KOLLRACK, MIKE;LEE, ANGELA;TAKEHARA, TAKAKO;FENG, JEFF;SHANG, QUANYUAN;LAW, KAM