| 摘要 |
PURPOSE: An active matrix display apparatus is provided to fabricate TFT's(thin film transistors) arranged in a picture element section and other TFT's arranged in a peripheral circuit section at the same time by adding an element for promoting the crystallization of a silicon thin film so as to acetate solution as it is selectively changed in amount. CONSTITUTION: A prime film of silicon oxide and an amorphous silicon film are formed on a substrate. A nickel-containing acetate solution which promotes crystallization is applied onto the amorphous silicon film to introduce nickel onto the exposed surface of the silicon film wherein the nickel contained in an acetate solution is 10 ppm(parts per million) in concentration. A silicon oxide film is newly formed, and the nickel-containing acetate solution which promotes crystallization is applied to introduce nickel onto the exposed surface of the silicon film wherein the nickel contained in an acetate solution is 100 ppm in concentration. Nickel is introduced onto the surface of the amorphous silicon film of peripheral circuit TFT's ten times as much in concentration as that introduced onto the surface of the amorphous silicon film of picture element TFT's. |
