发明名称 Using ARL to decrease EPD noise in CMP process
摘要 The invention provides a method for decreasing endpoint detection noise in a chemical-mechanical polishing process. In this method an anti-reflective layer is formed on the material whose reflected light interferes with the incident light. The anti-reflective layer can avoid light reflected by the material that would affect the detector. Thus, the end point of the chemical-mechanical polishing process can be easily verified and the quality of the devices is improved.
申请公布号 US6315917(B1) 申请公布日期 2001.11.13
申请号 US19980223408 申请日期 1998.12.30
申请人 UNITED MICROELECTRONICS CORP. 发明人 SHIEH MING-SHIOU
分类号 B24B37/04;B24B49/12;(IPC1-7):B44C1/22 主分类号 B24B37/04
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