发明名称 |
Using ARL to decrease EPD noise in CMP process |
摘要 |
The invention provides a method for decreasing endpoint detection noise in a chemical-mechanical polishing process. In this method an anti-reflective layer is formed on the material whose reflected light interferes with the incident light. The anti-reflective layer can avoid light reflected by the material that would affect the detector. Thus, the end point of the chemical-mechanical polishing process can be easily verified and the quality of the devices is improved.
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申请公布号 |
US6315917(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19980223408 |
申请日期 |
1998.12.30 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SHIEH MING-SHIOU |
分类号 |
B24B37/04;B24B49/12;(IPC1-7):B44C1/22 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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