| 摘要 |
There is provided a method of dry etching a nickel film formed on a substrate by means of plasma of an etching gas, wherein the etching gas includes at least one of CO and CO2 gases, and the substrate is designed to keep a temperature in the range of -25° C. to 40° C. both inclusive, while the substrate is being etched. For instance, the etching gas is a mixture gas including CO and CO2 gases, a mixture gas including CO, CO2 and H2 gases, or a mixture gas including CO and H2 gases. The above-mentioned method provides higher etching accuracy, higher etching rate, and less etching damage in a substrate.
|
