发明名称 |
Electroplanarization of large and small damascene features using diffusion barriers and electropolishing |
摘要 |
A disclosed electroplanarization process involves "masking" certain regions of a wafer surface during electropolishing. The regions chosen for masking are features of relatively low aspect ratio (i.e., features that are wider than they are deep). The masking is accomplished with a material of relatively low ionic conductivity, which effectively slows or blocks transport of the metal ions produced during electropolishing. Examples of masking materials include concentrated phosphoric acid and certain polymers.
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申请公布号 |
US6315883(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19990412837 |
申请日期 |
1999.10.05 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
MAYER STEVEN T.;CONTOLINI ROBERT J. |
分类号 |
B23H5/08;H01L21/321;H01L21/3213;(IPC1-7):C25D5/02;C25D5/48;C25D7/12;C25F3/16 |
主分类号 |
B23H5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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