发明名称 Method for generating differential tri-states and differential tri-state circuit
摘要 A differential tri-state circuit in which noise picked up by an output signal can be removed. The differential tri-state circuit is so configured that, by allowing the same currents to flow from a current source to a p-channel MOS FET and an n-channel MOS FET and to other p-channel MOS FET and other n-channel MOS FET, high impedance state exists between output terminals. With the p-channel MOS FET and the n-channel MOS FET being brought into conduction and with other p-channel MOS FET and other n-channel MOS FET being brought out of conduction, by causing terminating resistors RT1 and RT2 to be conducting or by bringing about a state being in reverse to the above, a 0 state or 1 state is outputted between output terminals.
申请公布号 US6316964(B1) 申请公布日期 2001.11.13
申请号 US19990455509 申请日期 1999.12.06
申请人 NEC CORPORATION 发明人 WATARAI SEIICHI
分类号 H03K19/0175;H03K17/693;H03K19/003;H03K19/094;H04B1/00;(IPC1-7):H03K19/094 主分类号 H03K19/0175
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