Method of fabricating various-sized passivated integrated circuit chips from a borderless gate array

摘要

Effective passivation structures and guard rings can be formed in borderless gate arrays by forming the gates in an array of discrete blocks separated by thin scribe lines in which the substrate is not covered by gates. Diffusions for guard rings can be formed in the substrate for guard ring purposes, and passivation structures can be sealingly attached to the substrate. Various circuit metalizations such as discrete layers or different circuits can be produced with a single mask by covering all but a selected portion of the mask during exposure.