发明名称 |
Easy to manufacture integrated semiconductor memory configuration with platinum electrodes |
摘要 |
The integrated semiconductor memory configuration has a semiconductor body in which selection transistors and storage capacitors are integrated. The storage capacitors have a dielectric layer configured between two electrodes. At least the upper electrode is constructed in a layered manner with a platinum layer, that is seated on the dielectric layer, and a thicker, base metal layer lying above the platinum layer.
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申请公布号 |
US6316802(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19990282091 |
申请日期 |
1999.03.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHINDLER GüNTHER;HARTNER WALTER;HINTERMAIER FRANK;MAZURE-ESPEJO CARLOS;BRUCHHAUS RAINER;HOENLEIN WOLFGANG;ENGELHARDT MANFRED |
分类号 |
H01L27/10;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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