发明名称 |
Method of fabricating a node contact |
摘要 |
A method of fabricating a node contact opening is described. A dielectric layer is formed on a substrate. A first conductive layer is formed on the dielectric layer. The first conductive layer is etched to form a trapezoidally cross-sectioned opening exposing a portion of the dielectric layer. The dielectric layer exposed by the trapezoidally cross-sectioned opening is etched to form a node contact opening in the dielectric layer exposing a part the substrate. A second conductive layer is formed to fill the node contact opening and in contact with the conductive layer.
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申请公布号 |
US6316368(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19990286080 |
申请日期 |
1999.04.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN KWANG-MING;PENG TZU-MIN;CHEN CHIEH-TE;LIU PANG-MIAO |
分类号 |
H01L21/033;H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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