| 摘要 |
A method for forming ohmic contacts on a silicon carbide substrate (10, 12) is provided. The method includes the steps of providing amorphous silicon and forming an amorphous silicon layer (14) on a silicon carbide substrate (10, 12). A metal layer (16) is formed on the amorphous silicon layer (14) and the resulting structure is annealed to create a metal silicide layer (18) on the silicon carbide substrate (10, 12). A silicon carbide ohmic contact is also provided. |
