| 摘要 |
<p>On a first interlayer insulating film 41, a second wiring layer 34 comprising a plurality of wirings 35 with concave portions between adjacent ones of the wirings 35, is superposed. A second interlayer is insulting film 43 is superposed on the second wiring layer 34. The second interlayer insulating film 43 layer 34 is made of film producing material, such as CF film, that is unlikely to serve as filling due to its intrinsic property. Gasses that are used to produce the film producing material unlikely to be filling include C6F6 gas, for example, and ionizing the gas into plasma allows the CF film to be formed on the wiring layer 34 while inhibiting the CF film from filling the concave portions 30. In this way, air gaps 36 are defined in shapes similar to those of the concave portions 30 between the wirings 35. The semiconductor device manufactured in such a manner can avoid reducing its mechanical strength while capacities between the wirings are decreased. <IMAGE></p> |
