| 摘要 |
PURPOSE: A planarization method of an interlayer dielectric is provided to prevent a breakage of a word line by preventing an over dishing using a buffer oxide. CONSTITUTION: After sequentially depositing and patterning a gate oxide, a polysilicon layer, a polysilicide layer, a mask oxide and a mask nitride on a semiconductor substrate(10), a gate is formed by forming on a spacer at both sidewalls of the resultant structure. After sequentially forming an interlayer dielectric(45) and a buffer oxide(50) on the resultant structure, an annealing process is carried out. The buffer oxide(50) and the interlayer dielectric(45) are planarized by CMP(Chemical Mechanical Polishing). After forming a contact hole to expose the gate, a plug polysilicon layer is filled into the contact hole. Then, the resultant structure is planarized by CMP.
|
