发明名称 LOW ON-RESISTANCE MOSFET IMPLEMENTED, BY-PASS DIODE OR CIRCUIT BREAKER AND RELATED SELF-POWERING AND CONTROL CIRCUIT
摘要 A MOSFET implemented self-powered current by-pass or circuit breaker device is based on the use of a high multiplication factor (HMF) inductive voltage booster, adapted to boost a voltage as low as few tens of mV up to several Volts, assisted by a start-up low multiplication factor (LMF) charge pump made with low threshold transistors for providing a supply voltage to a polarity inversion detecting comparator of the drain-to-source voltage difference of a power MOSFET connected in parallel to a DC source or string of series connected DC sources or battery, in series to other DC sources during normal operation of the parallel connected DC source or string of series connected DC sources or battery. The inductance for the high multiplication factor, inductive voltage booster for most of the considered power applications is on the order of a few pH and such a relatively send inductor may be included as a discrete component in a compact package or “system-in-package” of monolithically integrated circuits.
申请公布号 US2011278955(A1) 申请公布日期 2011.11.17
申请号 US201113096393 申请日期 2011.04.28
申请人 SIGNORELLI TIZIANA TERESA;PULVIRENTI FRANCESCO;STMICROELECTRONICS S.R.L. 发明人 SIGNORELLI TIZIANA TERESA;PULVIRENTI FRANCESCO
分类号 H02J1/00 主分类号 H02J1/00
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