| 发明名称 |
Method of manufacturing group-iii nitride compound semiconductor device |
| 摘要 |
A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage. <IMAGE> |
| 申请公布号 |
AU4880301(A) |
申请公布日期 |
2001.11.07 |
| 申请号 |
AU20010048803 |
申请日期 |
2001.04.20 |
| 申请人 |
TOYODA GOSEI CO. LTD. |
发明人 |
MASANOBU SENDA;JUN ITO;TOSHIAKI CHIYO;NAOKI SHIBATA;SHIZUYO ASAMI |
| 分类号 |
C23C14/00;C23C14/06;C30B23/02;H01L21/203;H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
C23C14/00 |
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