发明名称 Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
摘要 The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
申请公布号 US6313493(B1) 申请公布日期 2001.11.06
申请号 US19980140150 申请日期 1998.08.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MORI TOSHIKI;NAKAO ICHIRO;FUJITA TSUTOMU;SEGAWA REIJI
分类号 G11C5/00;G11C5/02;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 主分类号 G11C5/00
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