发明名称 |
Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip |
摘要 |
The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
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申请公布号 |
US6313493(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US19980140150 |
申请日期 |
1998.08.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORI TOSHIKI;NAKAO ICHIRO;FUJITA TSUTOMU;SEGAWA REIJI |
分类号 |
G11C5/00;G11C5/02;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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