| 摘要 |
An integrated circuit device using electrically programmable non-volatile memory cells, such as a single polysilicon having a single polysilicon level, for identifying and enabling the integrated circuit device. Such as an integrated circuit device having a memory array having rows and columns, and including redundant elements. The redundant elements include a selected one of redundant rows, redundant columns, and redundant rows and columns; and the redundant elements are selected and enabled by electrically programmable non-volatile memory cells. In another embodiment, an integrated circuit device having an electrical chip identification device including electrically programmable non-volatile memory cells. In another embodiment, an integrated circuit device having a speed and functionality tradeoff element including electrically programmable non-volatile memory cells, wherein one or more of the electrically programmable non-volatile memory cells are enabled for modifying the speed and functionality of the integrated circuit device.
|
