发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To provide a low-priced semiconductor device having the high integration and the high reliability. CONSTITUTION: This semiconductor device has a substrate 1 containing a first region MC and a second region PC in a periphery thereof; an insulation film 21 formed on the second region PC; electrodes (17, 23) formed on a surface of the substrate 1 within the first region MC; a dielectric film 31 formed on the electrodes (17, 23); and an opposite electrode 35 formed on the dielectric film 31. A shape of a sidewall of the insulation film 21 contains a part reflecting a shape of an outer periphery of the sidewall of the opposite electrodes (17, 23).
申请公布号 KR20010095222(A) 申请公布日期 2001.11.03
申请号 KR20010017289 申请日期 2001.04.02
申请人 FUJITSU LIMITED;KABUSHIKI KAISHA TOSHIBA 发明人 FUKUZUMI YOSHIAKI;HATADA AKIYOSHI;NAKAMURA SHUNJI
分类号 H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L21/8242
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