发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PURPOSE: To provide a low-priced semiconductor device having the high integration and the high reliability. CONSTITUTION: This semiconductor device has a substrate 1 containing a first region MC and a second region PC in a periphery thereof; an insulation film 21 formed on the second region PC; electrodes (17, 23) formed on a surface of the substrate 1 within the first region MC; a dielectric film 31 formed on the electrodes (17, 23); and an opposite electrode 35 formed on the dielectric film 31. A shape of a sidewall of the insulation film 21 contains a part reflecting a shape of an outer periphery of the sidewall of the opposite electrodes (17, 23).
|
申请公布号 |
KR20010095222(A) |
申请公布日期 |
2001.11.03 |
申请号 |
KR20010017289 |
申请日期 |
2001.04.02 |
申请人 |
FUJITSU LIMITED;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI;HATADA AKIYOSHI;NAKAMURA SHUNJI |
分类号 |
H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|